发明名称 |
SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF |
摘要 |
a storage cell which comprises a floating gate electrode (204) formed on a tunnel oxide layer (203), a polycrystalline silicon thin film (206) formed on an interface insulating layer (205) and a control gate electrode (208) formed on a polycrystalline silicon thin film (206); a transistor comprising the floating gate electrode (204) formed on a gate oxide (202), the interface insulating layer (205) and the polycrystalline silicon thin film (206) formed on the floating gate electrode (204) and the control gate electrode (208) connected to a floating gate electrode at one point and formed on the polycrystalline silicon thin film (206).
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申请公布号 |
KR960009995(B1) |
申请公布日期 |
1996.07.25 |
申请号 |
KR19920013817 |
申请日期 |
1992.07.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWON, KI - HO;CHOE, JUNG - HYUK;SEO, KANG - DUK |
分类号 |
G11C17/00;H01L21/8247;H01L27/105;H01L29/788;H01L29/792;(IPC1-7):H01L27/10;H01L27/115 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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