发明名称 SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF
摘要 a storage cell which comprises a floating gate electrode (204) formed on a tunnel oxide layer (203), a polycrystalline silicon thin film (206) formed on an interface insulating layer (205) and a control gate electrode (208) formed on a polycrystalline silicon thin film (206); a transistor comprising the floating gate electrode (204) formed on a gate oxide (202), the interface insulating layer (205) and the polycrystalline silicon thin film (206) formed on the floating gate electrode (204) and the control gate electrode (208) connected to a floating gate electrode at one point and formed on the polycrystalline silicon thin film (206).
申请公布号 KR960009995(B1) 申请公布日期 1996.07.25
申请号 KR19920013817 申请日期 1992.07.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KWON, KI - HO;CHOE, JUNG - HYUK;SEO, KANG - DUK
分类号 G11C17/00;H01L21/8247;H01L27/105;H01L29/788;H01L29/792;(IPC1-7):H01L27/10;H01L27/115 主分类号 G11C17/00
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