发明名称 |
Verfahren zur Herstellung einer dünnen Schicht und Halbleitervorrichtungen |
摘要 |
A method for forming a thin film, comprising the steps of: generating a plasma in a plasma generation chamber by action of an electric field generated by a microwave and a magnetic field generated by an exciting coil arranged around; and introducing the generated plasma into a reaction chamber, resulting in forming a thin film on a sample placed on a sample stage, wherein it is a chracteristic to form a metal nitride film on said sample, by introducing Ar, H2, and N2 gas into said plazma generation chamber, while introducing a metallic gas into said reaction chamber. By the method according to the present invention, it is possible to form a thin film having good Step Coverage on the contact hole, in addition, on the side wall of the contact hole a thinner film can be formed than that on the bottom. As a result, in the next step, filling in with interconnection materials can be surely performed, resulting in improving reliability of LSI devices. <IMAGE> |
申请公布号 |
DE69120371(D1) |
申请公布日期 |
1996.07.25 |
申请号 |
DE1991620371 |
申请日期 |
1991.10.24 |
申请人 |
SUMITOMO METAL INDUSTRIES, LTD., OSAKA, JP |
发明人 |
AKAHORI, TAKASHI, AMAGASAKI, HYOGO 660, JP;TANIHARA, AKIRA, SOURAKU-GUN, KYOTO 619-02, JP |
分类号 |
H01L21/285;H01L21/768 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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