| 摘要 |
<p>A semiconductor pressure transducer comprises a silicon die having a topside and a bottom side. The silicon die further has a cavity in the bottom side thereby forming a diaphragm. Four piezoresistive elements are disposed on the topside of the silicon die on a periphery of the diaphragm and connected via metalized conductors disposed on the silicon die in the form of a Wheatstone bridge. A plurality of bonding pads disposed on the topside of the silicon die provides external access to the Wheatstone bridge circuit. A diagnostic conductor is disposed on the topside of the silicon die such that the periphery of the diaphragm is crossed, the diagnostic conductor being connected to corresponding bonding pads at each of the diagnostic conductor. Thus, when the diaphragm ruptures, the diagnostic conductor ruptures thereby providing a positive indication of the rupture of the diaphragm by external circuitry in which the diagnostic conductor is used.</p> |
