摘要 |
An anti-fuse structure characterized by a substrate, an oxide layer formed over the substrate having an opening formed therein, an amorphous silicon material disposed within the opening and contacting the substrate, a conductive protective material, such as titanium tungsten, disposed over the amorphous silicon material, and oxide spacers lining the walls of a recess formed within the protective material. The protective material and the spacers provide tighter programming voltage distributions for the anti-fuse structure and help prevent anti-fuse failure. |
申请人 |
VLSI TECHNOLOGY, INC., SAN JOSE, CALIF., US |
发明人 |
BOARDMAN, WILLIAM, J., SAN JOSE, CA 95133, US;CHAN, DAVID, P.-KWAN, SAN RAMON, CA 94583, US;CHANG, KUANG-YEH, LOS GATOS, CA 95032, US;GABRIEL, CALVIN, T., CUPERTINO CA 95014, US;JAIN, VIVEK, MILPITAS, CA 95035, US;NARIANI, SUBHASH, R., SAN JOSE, CA 95131, US |