发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a reliable semiconductor device by preventing wiring from being disconnected and step coverage from deteriorating since the wiring reaching a conductive terminal from the pad electrode of a semiconductor chip is formed through a via hole. <P>SOLUTION: The semiconductor device comprises a support plate 5 adhered to the surface of the semiconductor substrate 1 so that the semiconductor substrate 1 is covered with a pad electrode 3 formed via an insulating layer 2 made of a silicon oxide film, a silicon nitride film or the like, and the via hole 8 formed so that it reaches the surface of the pad electrode 3 from the rear of the semiconductor substrate 1. The opening diameter of a part close to the surface of the pad electrode is larger than that at a part close to the rear of the semiconductor substrate 1. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005235858(A) |
申请公布日期 |
2005.09.02 |
申请号 |
JP20040040403 |
申请日期 |
2004.02.17 |
申请人 |
SANYO ELECTRIC CO LTD;TOSHIBA CORP;FUJITSU LTD;NEC CORP |
发明人 |
KAMEYAMA KOJIRO;SUZUKI AKIRA;OKAYAMA YOSHIHISA;UMEMOTO MITSUO;TAKAHASHI KENJI;TERAO HIROSHI;HOSHINO MASATAKA |
分类号 |
H01L23/52;H01L21/3205;H01L21/60;H01L21/768;H01L23/12;H01L23/31;H01L23/48 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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