发明名称 DIAMOND FILM SYNTHESIS BY DC PLASMA CVD
摘要 The diamond film is deposited by decomposing reaction gas, the mixture of hydrogen, 1-10% methane and 0-5% oxygen or hydrogen and 1-30% carbon monoxide, with the plasma generated between the negative electrode, the multi-negative electrode formed by arranging the negative electrode of the plural number connected to the independent direct current, and the positive electrode inside of reactor. The synthesis pressure is maintained at 100-500Torr in order to deposit the diamond film with high speed by generating a large plasma between both electrodes.
申请公布号 KR960010087(B1) 申请公布日期 1996.07.25
申请号 KR19930032330 申请日期 1993.12.31
申请人 KIST 发明人 BAEK, YOUNG - JOON;LEE, JAE - KAP;EUN, KWANG - YONG
分类号 C01B31/06;C30B29/04;(IPC1-7):C01B31/06 主分类号 C01B31/06
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