DOUBLE PHOTO LITHOGRAPHY METHOD WITHOUT INTERMIXING
摘要
<p>The present invention provides a double photolithography method in which, after a first photoresist pattern including a crosslinkable agent is formed on a semiconductor substrate, a crosslinkage is formed in a molecular structure of the first photoresist pattern. A second photoresist film may be formed on a surface of the semiconductor substrate on which the crosslinked first photoresist patterns are formed. Second photoresist patterns may be formed by exposing, post-exposure baking, and developing the second photoresist film.</p>
申请公布号
KR100575001(B1)
申请公布日期
2006.04.24
申请号
KR20040104022
申请日期
2004.12.10
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KANG, YOOL;CHO, HAN KU;WOO, SANG GYUN;LEE, SUK JOO;HATA MITSUHIRO;LEE, HYUNG RAE;RYOO, MAN HYOUNG