NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND THE MANUFACTURING METHOD THEREOF

摘要

The non-volatile semiconductor memory device has the feature that the device isolation structure is formed in the field region, and comprises: a first field oxide layer (105) which is formed among the neighboring active regions; a second field oxide layer (105') which is formed on the first field oxide layer (105) which is among the neighboring floating gates; a channel region near the surface of the semiconductor substrate below the first field oxide layer (105).