发明名称 scanning memory device and error correction method
摘要 <p>A high-data density, high-data rate scanning memory device reads and writes data using a plurality of probes. The scanning memory device comprises a memory (2) composed of a matrix of cell arrays (21) each containing a submatrix of memory cells, a plurality of probes (11) having a one-to-one correspondence to each cell array, and a positioning device that operates to simultaneously change the positions of probes relative to the cell arrays. Each of the cell arrays has a cell array status memory (24) for storing information designating whether the cell array is functional or whether the cell array is defective. If the number of defective memory cells detected within each cell array exceeds some predetermined number, the cell array is designated as defective. Defective cell arrays are logically replaced by functional cell arrays. Error correction is applied to the data to reduce reading and writing errors by the scanning memory device and to maintain the integrity of data stored in the memory. &lt;IMAGE&gt; &lt;IMAGE&gt;</p>
申请公布号 EP0723262(A2) 申请公布日期 1996.07.24
申请号 EP19950309350 申请日期 1995.12.21
申请人 HEWLETT-PACKARD COMPANY 发明人 KAMAE, TAKAHIKO;SAITO, MITSUCHIKA;IHARA, KIYOYUKI
分类号 G11C29/04;G11B9/00;G11B9/14;G11B20/18;G11C29/00;G11C29/56;(IPC1-7):G11B9/00;G11B19/04 主分类号 G11C29/04
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