| 摘要 |
<p>Prodn. of a two-phase CCD with identical self-aligned dopant in a doped semiconductor substrate and underlying first and second phase connected electrode strips recessed within an insulative trench, which defines the strip width, and with the strips coplanar with the trench surface, is described. A uniform insulative layer (20) is formed over the substrate, opposite type ions implanted in the substrate, a second insulative layer formed and patterned (48) to form a trench and a conductive layer uniformly deposited and patterned into strips (30) perpendicular to the trench. Impurity ions are implanted, except where blocked by the strips, to form charge transfer direction biasing implants, a third insulating layer is provided over the conductor and a second conductor layer deposited (40). Both conductive layers are planarised to pattern the second layer into strips isolated from one another and from the first strips. Grooves are etched into regions sepg. alternate pairs of first and second strips, and filled with conductive interconnect (60) to connect alternate pairs to form isolated first and second electrodes (58).</p> |
