发明名称 |
FIELD EFFECT TRANSISTOR WITH SWITCHABLE BODY TO SOURCE CONNECTION |
摘要 |
To avoid forward biasing the diodes within an N-channel transistor, the body and source of the N-channel transistor are switchably connected via a high-voltage FET. The gates of the N-channel transistor and high-voltage transistor are connected together so that both transistors are on or off simultaneously. When both transistors are on, the high-voltage transistor shorts the body and source of the N-channel transistor. When both transistors are off, the body and source of the N-channel transistor are disconnected and a third transistor couples the body to a reference potential. The N-channel transistor and high voltage transistor share a common body in a semiconductor substrate. The source of the N-channel transistor provides an output terminal for the circuit. A number of these devices, each connected to a different supply voltage, can be connected to the same output terminal and selectively energized to form a voltage multiplexer. |
申请公布号 |
EP0722629(A1) |
申请公布日期 |
1996.07.24 |
申请号 |
EP19940929195 |
申请日期 |
1994.09.16 |
申请人 |
MICREL INCORPORATED |
发明人 |
MOYER, JAMES, C.;BITTNER, HARRY, J. |
分类号 |
H01L21/8234;B29C35/08;B29C67/00;H01L27/088;H01L29/10;H01L29/78;H03K17/08;H03K17/0814;H03K17/693;H03K19/003 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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