发明名称 |
SILICON CARBIDE PRODUCT, METHOD FOR PRODUCING SAME, AND METHOD FOR CLEANING SILICON CARBIDE PRODUCT |
摘要 |
A silicon carbide product is disclosed which is characterized by having a surface with a metal impurity concentration of not more than 1 x1011 (atoms/cm2). Also disclosed are a method for producing such a silicon carbide product and a method for cleaning a silicon carbide product. A silicon carbide having such a highly cleaned surface can be obtained by cleaning it with a hydrofluoric acid, a hydrochloric acid, or an aqueous solution containing a sulfuric acid and a hydrogen peroxide solution. The present invention provides a highly cleaned silicon carbide, and thus enables to produce a semiconductor device which is free from consideration on deterioration in characteristics caused by impurities. Further, when the silicon carbide is used in a unit for semiconductor production or the like, there is such an advantage that an object processed in the unit can be prevented from suffering an adverse affect of flying impurities. ® KIPO & WIPO 2007 |
申请公布号 |
KR20070012771(A) |
申请公布日期 |
2007.01.29 |
申请号 |
KR20067001913 |
申请日期 |
2004.07.07 |
申请人 |
ADMAP INC.;OHMI TADAHIRO;MITSUI ENGINEERING & SHIPBUILDING CO., LTD. |
发明人 |
OHMI TADAHIRO;TERAMOTO AKINOBU;SANO SUMIO |
分类号 |
C01B31/36;C30B29/36;H01L21/04;H01L21/304;H01L21/306;H01L21/314;H01L29/16;H01L29/78 |
主分类号 |
C01B31/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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