POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A power semiconductor device and its manufacturing method are provided to reduce on-resistance of the power semiconductor device by shortening a channel of a current flowing through a substrate. A first conductive-type drift region(60) of low concentration is formed on a front of a first conductive-type substrate(50). A second conductive-type body region(70) is formed on a surface of the drift region. A first conductive-type source region(74) is formed in the body region. A drain electrode(78) is formed on a rear surface of the substrate and has an extended part to a predetermined depth of the substrate. A trench(80) is formed on the rear surface of the substrate. The drain electrode is extended to be gap-filled in the trench.