METHOD FOR FABRICATING FIELD-EFFECT TRANSISTOR STRUCTURES WITH GATE ELECTRODES WITH A METAL LAYER,申请号KR20050057613-传众专利搜索

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发明名称	METHOD FOR FABRICATING FIELD-EFFECT TRANSISTOR STRUCTURES WITH GATE ELECTRODES WITH A METAL LAYER
摘要
申请公布号	KR100682149(B1)	申请公布日期	2007.02.12
申请号	KR20050057613	申请日期	2005.06.30
申请人		发明人
分类号	H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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