发明名称 |
Ferroelectric memory |
摘要 |
A highly reliable and high speed ferroelectric memory having a high degree of integration. In a ferroelectric memory having a multiple of memory cells M1, each constituted by one transistor and one ferroelectric capacitor, in the normal operation, the ferroelectric memory is used as a volatile memory in which a voltage on a storage node ST1 stores information in a DRAM mode. Both the electric potential at the plate PL1 of the ferroelectric capacitor and a precharge electric potential on a data line DL1(j) are Vcc/2. When the a power supply voltage is turned on, a polarization state is detected as a ferroelectric memory of a plate electric potential of Vcc/2 and a precharge electric potential of Vss (or Vcc) and the read operation is performed a FERAM mode. The switching between the DRAM mode and the FERAM mode is executed by generating a signal to designate the FERAM mode in the memory along with the turn-on of the power supply and by generating a signal to designate the DRAM mode after completion of the conversion operation from nonvolatile information to volatile information.
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申请公布号 |
US5539279(A) |
申请公布日期 |
1996.07.23 |
申请号 |
US19940362239 |
申请日期 |
1994.12.22 |
申请人 |
HITACHI, LTD. |
发明人 |
TAKEUCHI, KAN;HORIGUCHI, MASASHI;AOKI, MASAKAZU;MATSUNO, KATSUMI;SAKATA, TAKESHI;ETOH, JUN;NAKAGOME, YOSHINOBU |
分类号 |
G11C11/22;(IPC1-7):G11C11/22 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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