发明名称 |
DC plasma jet CVD method for producing diamond |
摘要 |
A process for producing diamond includes a step of bringing a columnar cathode and a tubular pilot anode provided concentrically around the cathode, into proximity to a plasma jetting port of a front end portion of a tubular main anode provided concentrically around the pilot anode. According to the process, a voltage is applied across the cathode and the pilot anode to convert a pilot gas to the form of a plasma. Then, the cathode is moved away from the pilot anode along a common axis. The process also includes the step of holding the discharge voltage between the cathode and the pilot anode at a first preselected voltage, and then applying voltage across the cathode and the main anode to convert a main gas to the form of a plasma. Subsequently, at least the pilot anode is moved away from the main anode along the common axis while maintaining the discharge voltage between the cathode and the pilot anode at the first preselected voltage. The process further includes the steps of holding the discharge voltage between the cathode and the main anode at a second preselected voltage and jetting the main gas in the form of plasma from the jetting port while generating a main arc between the main anode and the cathode.
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申请公布号 |
US5538765(A) |
申请公布日期 |
1996.07.23 |
申请号 |
US19950417787 |
申请日期 |
1995.04.05 |
申请人 |
FUJITSU LTD. |
发明人 |
KURIHARA, KAZUAKI;SASAKI, KENICHI;ITANI, TSUKASA;KAWARADA, MOTONOBU |
分类号 |
C23C16/27;H05H1/34;H05H1/48;(IPC1-7):B05D3/06;H05H1/24 |
主分类号 |
C23C16/27 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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