发明名称 SILICON CARBIDE MOLDED PRODUCT BY CHEMICAL VAPOR DEPOSITION AND ITS PRODUCTION
摘要 PURPOSE: To obtain a CVD-SiC molded product prevented from the generation of cracks and warpage, and further to provide a method for producing the same. CONSTITUTION: A SiC molded product by the CVD method, wherein SiC films are formed on both the sides of an SiC substrate formed by the CVD method. The method for producing the SiC molded product comprises forming a SiC film on the surface of the substrate by the CVD method, removing the substrate, and further forming the SiC films on both the sides of the obtained SiC substrate.
申请公布号 JPH08188408(A) 申请公布日期 1996.07.23
申请号 JP19940340993 申请日期 1994.12.29
申请人 TOYO TANSO KK 发明人 HIRANO HIROYUKI
分类号 B28B1/30;B01J19/00;C01B31/36;C04B35/565;C23C16/32;C23C16/42;C23C16/56;H01L21/203;H01L21/205 主分类号 B28B1/30
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