SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE: To make it possible to obtain a fully high diffusion preventive effect to aluminium by a method wherein a metal silicide film containing a specified amount of nitrogen is formed on diffused layers and the nitrogen is made to segregate in the grain boundaries in the silicide film. CONSTITUTION: A nitrogen-containing titanium film 9 is formed on diffused layers 7 and 8 in a nitrogen-containing atmosphere. The content of the nitrogen in this film 9 is set 0.5 to 10 atomic %. Then, the film 9 is turned into a titanium silicide by a heating treatment and an unreacted part of the film 9 is removed to form a titanium silicide film 10 on the layers 7 and 8. An interlayer insulating film 11 is formed on this film 10, this film 11 is selectively removed to form connection holes 12 in such a way that the film 9 is exposed through the bottoms of the holes 12. An aluminium film is selectively made to deposit in the interiors of these holes 12 to form buried plugs 13 and a wiring layer 14 is formed on the film 11. Here the concentration of the content of nitrogen in the film 10 is set at a concentration which is higher than that in grains in the film 10 in grain boundaries in the film 10.