| 摘要 |
PURPOSE: To provide a method of manufacturing an SOI substrate (including an SIMOX substrate) low in crystal defect and excellent in crystallinity. CONSTITUTION: An SOI substrate (or an SIMOX substrate) is manufactured through an SIMOX method, wherein crystal defects are previously introduced into an Si substrate at required spots, and then an oxygen ion implantation process and a high-temperature heat treatment are performed onto the Si substrate as usual for the formation an SIMOX substrate. For example, Si atoms are implanted into an Si substrate 10 (low-temperature heat treatment is carried out for allowing the Si substrate to recover from damage), and crystal defects 11 are introduced into the Si substrate 10 at required spots. Thereafter, a low dose (2×10<17> cm<2> ) of oxygen ions is implanted into the Si substrate 10, and then the Si substrate 10 is thermally treated at high temperatures. Therefore, crystal defects 11 are previously introduced into a substrate, whereby an SOI structure which is difficult to form by the implantation of a low dose of oxygen ions through a conventional technique can be formed and lessened in crystal defects and process cost.
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