| 摘要 |
PURPOSE: To obtain an SOI for high speed element easily by implanting impurities, with high concentration, into a substrate from which the insulation film is removed to form an epitaxial layer on the entire surface therof, removing the epitxial layer from the heavily doped region, depositing an insulation film on the epitaxial layer being left and then exposing the epitaxial layer. CONSTITUTION: An oxide 2 is deposited on an Si substrate 1 and subjected to photoetching at a part for implanting n<+> type impurities thus exposing the substrate 1. The exposed substrate 1 is implanted with n<+> type impurity ions to form an n<+> type impunity region 3 in the substrate. Subsequently, an epitaxial layer 4 is grown on the entire surface of the substrate and subjected to trench etching thus exposing the n<+> type impurity region 3' between the oxides. A second oxide 5 is then deposited on the entire surface of the substrate and subjected to etching thus exposing the entire surface of the epitaxial layer 4. Finally, an epitxial layer 7 is formed on an insulating film 6 having recesses thus obtaining an SOI.
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