| 摘要 |
A fabrication method of a semiconductor integrated circuit device is provided. A patterned oxidation-resistant film such as silicon nitride film is formed on or over a semiconductor substrate. Using the patterned oxidation-resistant film as a mask, the substrate is then thermally oxidized so that a first oxide film for isolation is selectively formed to define active regions on the substrate. After the oxidation-resistant film is removed, the substrate is thermally oxidized so that a second oxide film is formed on the active regions, without adding any process step. Then, the substrate is etched until the second oxide film is entirely removed so that the surfaces of the active regions are exposed. During this process step, the first oxide film is partially removed. Subsequently, a patterned conductor film is formed on the first oxide film and then, it is removed from the first oxide. Even if steps or protrusions produced on the first oxide film due to the "bird's head phenomenon", the steps or protrusions can be reduced in size or removed entirely together with the partial removal of the first oxide film. No leavings of the conductor film is produced on the first oxide film, avoiding short-circuit of the patterned conductor film.
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