| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an improved method of manufacturing a photolithographic phase shifting mask by forming a phase shift area within every other transparent area and continued transparent area. SOLUTION: A phase collision area 46 is produced in the areas between T-shaped parts 42A-42D and boundaries 44, 44A. A transparent connecting part 48 is formed in the phase collision area 46. This transparent connecting part 48 connects the T-shaped parts 42A-42D to the boundaries 44, 44A within the phase collision area 46. A transparent part 48A connects the T-shaped parts 42A-42D to the boundaries 44, 44A in a place where no phase collision is present. According to the request of a pattern, every other T-shaped parts 42B, 42D and every other boundary 44, 44A are formed as phase shift areas. The phase transfer area putted on a light transmitting area (for example, the phase shift area is put on light transmitting areas 42B, 42D) is larger than the light transmitting area. Thus, a phase shifting action is performed to the circumference of the edge part of a pattern exposed on a wafer by the light transmitting area.</p> |
