| 摘要 |
PURPOSE: To obtain a positive photoresist high in sensitivity and resolution and wide in development latitude and less in the dependency of a resist perfor mance on film thickness by incorporating at least one kind of 1,2- naphthoquinonediazido-sulfonic acid monoester of a specified polyhydroxy com pound. CONSTITUTION: At least one kind of 1,2-naphthoquinonediazido-sulfonic acid monoester of the polyhydroxy compound of mainly represented by formulae I and II in which each of R1 and R2 , is, independently, an H or halogen atom or an alkyl, aryl (or cycloalkyl) group but one of them is an H atom; each of R3 and R4 is, independently, an H or halogen atom or an alkyl, aryl, or cycloalkyl group; R5 is an H atom or an alkyl, aryl, or cycloalkyl group and when both of R9 and R10 are H atoms, R5 is not an H atom; and each of R6 -R10 is, independently, an H atom or an alkyl, aryl, or cycloalkyl group. |
