| 发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
PURPOSE: To strengthen the bonding between a bonding pad and a wire. CONSTITUTION: An Al wiring 35 as the topmost layer is composed of the compound film of the first barrier metal comprising a laminated film of a Ti film 30 and a TiN film 32 as well as an Al film 33 deposited on the first barrier metal and the second barrier metal composed of another TiN film 34 deposited on the Al film 33 so that the deposition of a reactant of Al and Ti on the surface of a bonding pad may be avoided. |
| 申请公布号 |
JPH08191104(A) |
申请公布日期 |
1996.07.23 |
| 申请号 |
JP19950002551 |
申请日期 |
1995.01.11 |
| 申请人 |
HITACHI LTD;HITACHI VLSI ENG CORP;HITACHI MICROCOMPUT SYST LTD |
发明人 |
SUZUKI MASAYASU;NISHIHARA SHINJI;SAWARA MASASHI;ISHIDA SHINICHI;ABE HIROMI;TODA SONOKO;UCHIYAMA HIROYUKI;TSUGANE HIDEAKI;YOSHIURA AIMEI |
| 分类号 |
H01L23/52;H01L21/3205;H01L21/60;H01L21/768;H01L23/522 |
主分类号 |
H01L23/52 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
