| 摘要 |
PURPOSE: To make an access time fast by attaining the high speed of operations of internal circuits such as sense-amplifier and so forth. CONSTITUTION: A semiconductor storage includes a memory cell array and a low voltage setting circuit, etc. The n channel transistor Tr2 of a low voltage setting circuit 17 being one example of the low voltage setting circuits is turned OFF by receiving a signalϕfrom an actuating signal control means before an internal circuit 13 is actuated to lower the potential of a BSG line 15 to a level near to the ground potential. Consequently, the rising of the potential level of the BSG line 15 due to the flow in of positive charges of the BSG line 15 is prevented and also since the potential differences between the source and the drain and the source and the gate of the n channel transistor are made large, the high speed of the operation of the internal circuit 13 is attained. That is, the access time of the semiconductor storage is made fast.
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