| 摘要 |
<p>PURPOSE: To prevent data from being damaged and to reduce a current consumption by making a pseudo writing current not to be flowed in a memory cell after the establishing of readout data. CONSTITUTION: When a memory cell current is flowed in a selected memory cell 31 connected to a data terminal 102, the cell 31 is made to be conducting. Then, after a wiring 104 is fixed to an L level, a current is not flowed in the cell 31 even though a sense-amplifier is in operating. Next, in the case the cell current is not present, when the wiring 104 is fixed to an H level, the output of a CMOS inverter consisting of a P channel 14 and an N channel 16 is made to be the L level. Consequently, an N channel 6 is turned OFF and the current path from the wiring 104 being the H level to a bit line 33 is interrupted. Thus, after an output terminal 107 is made to be the H level, the pseudo writing by the flowing of the current to the cell 31 is never performed.</p> |
