| 摘要 |
PURPOSE: To obtain a photosensitive compsn. having higher density of silicon atoms introduced and excellent durability against oxygen plasma and to enable silylation with high selectivity by incorporating a compd. which promotes silylation into the photosensitive compsn. CONSTITUTION: A resist for silylation is applied on a silicon substrate 1, prebaked, exposed and silylated in a liquid or vapor phase with using a silylating agent to form a silylated region 2B. The silylated region 2B is used as a mask to etch the resist film 2 with gas plasma. A compd. which promotes silylation is incorporated into the resist, or a polyfunctional silylating agent is used as a silylating agent, or a silylating agent having plural silicon atoms in one molecule is used as a silylating agent. The compd. which promotes silylation is a compd. having two or more hydroxyl groups in one molecule. By this method, the silylated layer after silylation has excellent durability against oxygen plasma and has excellent performance for formation of a fine pattern. |
