| 摘要 |
PURPOSE: To enhance the stability of the resist after exposure to postbacking without impairing the resolution of a pattern by adding crown ether compound to a base polymer. CONSTITUTION: The chemical amplification type resist is composed of a mixture of a base polymer, having a releasable protective group and an adamantyl skeleton or a hydroxystyrene skeleton, and an acid photogenerator, and this resist is formed by adding the crown ether compound having a structural formula, and it is embodied by the structural formula (A) 12-crown-4 and that of a complex (B) having a cation K<+> incorporated in it (X' being a halogen ion), and the addition of this crown ether compound into the chemical amplification type resist permits the obtained resist to incorporate cations in it and to prevent deactivation and to disperse the hydrophilic acid photogerator uniformly into the hydrophobic base polymer. |
