发明名称 FORMATION OF RESIST PATTERN
摘要 PROBLEM TO BE SOLVED: To provide a resist pattern having a vertical profile by forming a thin primary photo resist pattern which absorbs the light reflected by the surface of a lower base. SOLUTION: A primary photo resist 7' is thinly applied to a base 5 or a lower layer upper part, and exposing process using a mask 2 and developing process are executed to form a primary photo resist pattern. An intermediate layer 10 is formed over the whole surface, a secondary photo resist 9 is applied, and a secondary photo resist pattern is formed in the exposing process using the same mask 2 as the exposure of the primary photo resist 7' and developing process. Then, the intermediate layer 10 is etched to form a resist having a vertical profiled by the secondary photo resist pattern superposed with the primary photo resist pattern. Thus, the light irregularly reflected from the primary photo resist pattern is absorbed, whereby the occurrence of notching in the secondary photo resist pattern can be minimized.
申请公布号 JPH08190203(A) 申请公布日期 1996.07.23
申请号 JP19950178613 申请日期 1995.07.14
申请人 GENDAI DENSHI SANGYO KK 发明人 BE SOUMAN;HAKU KIKOU
分类号 G03F7/11;G03F7/004;G03F7/09;G03F7/095;G03F7/20;G03F7/26;G03F7/40;H01L21/027;(IPC1-7):G03F7/26 主分类号 G03F7/11
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