| 摘要 |
A semiconductor device includes a semiconductor substrate doped with a first conductivity type. The substrate has a surface, with a parallel array of word lines ion implanted as regions in the surface of said substrate. The N+ word lines are of the opposite conductivity type from the P- substrate. A dielectric layer, formed on the substrate above the word lines, is covered with a polysilicon layer doped with a P- conductivity type. A second dielectric layer covers the polysilicon layer. A parallel array of N+ conductivity regions form doped N+ bit lines in the polysilicon layer. Above the N+ bit lines are formed alternating strips of planarized silicon nitride separated by silicon dioxide strips which are covered by a BPSG layer. An etched code pattern is formed extending through the polysilicon layer in a predetermined region providing an encoded RON.
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