| 摘要 |
The present invention is directed to a low-energy (0 to 100 keV) or high-energy (1 to 4 MeV) single ion implantation system in which single ions are extracted from a focused ion beam or micro-ion beam by beam chopping. The low-energy single ion implantation system has, in combination with a focused ion beam system, an electrostatic deflector for beam chopping (20), an aperture for single ion extraction (21) and an electrode (35) for generating a retarding electric field to make the single ion soft-land on a specimen. The high-energy single ion implantation system has, in combination with an ion microprobe, a Cs sputter source (33) which enables dopant ion implantation and high LET ion irradiation. The single ion implantation method includes a step of implanting the extracted single ions from the both systems into the specimen at a predetermined target position with aiming accuracies of 50 nm phi and 1.5 mu m phi , respectively.
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