| 摘要 |
A sense circuit for a DRAM has a sense amplifier provided for each pair of bit lines, a pair of re-storing lines for providing a re-storing voltage therebetween, and a re-storing switch connected between one pair of bit lines and the pair of re-storing lines. A pair of switching elements are provided for each pair of bit lines and are connected between its associated one pair of bit lines and sense amplifier so that the sense amplifier is electrically connected with and electrically disconnected from the one pair of bit lines when the pair of switching elements are conductive and non-conductive, respectively. The re-storing switch is responsive to a turn-off of the pair of switching elements to electrically connect its associated pair of bit lines with the pair of re-storing lines for supplying the re-storing voltage to the pair of bit lines.
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