| 摘要 |
A semiconductor device has a connection electrode and protective film formed of organic material and covering the connection electrode. An opening is formed in the protective film to expose the connection electrode. A natural oxide layer is etched by argon-based dry etching. The surface layer of the protective film is altered to reduce the insulativity in the dry etching process. After a projection electrode is formed on the connection electrode later, the altered surface layer of the protective film is removed by oxygen-based dry etching. As no altered surface layer remain on the protective film, an adverse affect such as inadequate insulation does not occur. |
