| 摘要 |
FIELD: radio engineering; development of broad-band balancing devices in microelectronics. SUBSTANCE: device has first and second field-effect transistors and, in addition, it is provided with input field-effect transistor whose gate forms device input; source is grounded, and drain is connected to gate of first transistor and to source of second one whose gate combined with source of first transistor is connected to reference-voltage source. EFFECT: facilitated manufacture, improved serviceability within broad frequency band. |
