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发明名称
MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要
PURPOSE:To make sharp the impurity concentration distirubtion at the border between the Si substrate and the epitaxial layer as well as to uniform the epitaxial layer concentration, by radiating the neutron with a fixed method.
申请公布号
JPS53105965(A)
申请公布日期
1978.09.14
申请号
JP19770021232
申请日期
1977.02.28
申请人
NIPPON ELECTRIC CO
发明人
YOKOZAWA MINORU
分类号
H01L21/261;H01L21/263
主分类号
H01L21/261
代理机构
代理人
主权项
地址
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