| 摘要 |
A method for fabricating bond pads (20) on a semiconductor device that reduces intermetallic growth between a metallization layer and a bonding layer is discussed. Initially a metallization layer (26) is deposited over a substrate (22). Following steps include depositing a barrier layer (28) over the metallization layer (26), masking a portion of the barrier layer (28), and etching the barrier layer (28) and the metallization layer (26). Etching of the barrier (28) and metallization layers (26) is performed utilizing the barrier layer mask as a mask for both the barrier layer (28) and the metallization layer (26). Further steps include depositing a non-conductive layer (24) conformally overlying the barrier layer (28), masking a portion of the non-conductive layer (24), and etching the non-conductive layer (24). Etching the non-conductive layer (24) forms an exposed region of the barrier layer (28). A later step of this method includes forming a bond layer (30) over the exposed region of the barrier layer (28), with one possible formation method utilizing an electrolysis process. Thus a bond pad (20) with a capped metallization layer is produced with only two mask and etch steps. This bond pad will withstand ambient temperatures up to approximately 200 DEG C. |
