发明名称 IMPROVED SILICON SEMICONDUCTOR WAFER TEST
摘要 <p>A system for manufacturing semiconductor devices comprising means for forming a silicon semiconductor wafer, means for forming an oxidation gate on the wafer, and a wafer test arrangement (1) for testing the wafer, having an oxidation gate formed thereon, for contaminants by using a test drop. The wafer test arrangement comprises a rotating device (2) for receiving the wafer and for rotating in either direction in response to electrical signals generated by a first control device (36); a carrier device (7) positionable on the wafer and for retaining at least a portion of the test drop in contact with the wafer during relative movements of the carrier device (7) over the surface of the wafer while substantially eliminating direct contact between the carrier device (7) and the wafer; and a radial moving device (18) for moving the carrier device along a radial path relative to the wafer rotation in response to second electrical signals generated by a second control device (34), so that the carrier device follows a path covering substantially all of a predetermined portion of the surface of a wafer.</p>
申请公布号 WO1996021852(P1) 申请公布日期 1996.07.18
申请号 US1995017097 申请日期 1995.12.29
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