| 摘要 |
<p>An insulating substrate (101) has a U-shaped conductive layer (108) which produces a magnetic field (121) when a current flows therethrough as indicated by arrows (120). The substrate (101) also includes a conductive layer (103) on which a power semiconductor element (102) is mounted through its main electrode. A current detector (111) such as Hall effect elements is located inside the U-shaped conductive layer (108). When a load current flows through the semiconductor element (102), it flows through the conductive layer (108) to produce the magnetic field (121) since the other main electrode of the semiconductor element (102) is electrically connected to one end of the conductive layer (108) through a metal wire. Accordingly, the load current flowing through the semiconductor element (102) will be effectively detected by the current detector (111) without connecting a resistor or current transformer to external terminals of a power semiconductor device, thereby providing a composite semiconductor device with a compact structure used for inverters for driving three-phase motors, etc. <IMAGE></p> |
