| 摘要 |
A photodiode of a CMOS(Complementary Metal Oxide Semiconductor) image sensor is provided to suppress dark current by preventing a part of ion-doped layer from being diffused into a depletion region of a PN junction. A CMOS(Complementary Metal Oxide Semiconductor) image sensor comprises a photodiode, and a MOS(Metal Oxide Semiconductor) transistor. The photodiode comprises a well with a first conductivity formed in a semiconductor substrate(Sub), a first ion-doped layer(PDN) formed in the semiconductor substrate with an opposite conductivity to the first conductivity of the well, a second ion-doped layer(PDP) with a first conductivity, formed on the first ion-doped layer adjacent a surface of the substrate, a conductive electrode(200) formed on the substrate covering the second ion-doped layer, and being transparent at visible rays, and an insulator film(200a) formed on the surface of the substrate, deposited between the second ion-doped layer and conductive layer.
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