Field-effect-transistor with gate spacer,申请号EP19900311087-传众专利搜索

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发明名称	Field-effect-transistor with gate spacer
摘要
申请公布号	EP0424019(B1)	申请公布日期	1996.07.17
申请号	EP19900311087	申请日期	1990.10.10
申请人	AT&T CORP.	发明人	LEE, KUO-HUA;LU, CHIH-YUAN;SUNG, JANMYE
分类号	H01L21/265;H01L21/336;H01L29/78;(IPC1-7):H01L21/28;H01L21/033	主分类号	H01L21/265
代理机构		代理人
主权项
地址

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