| 摘要 |
A plasma processor includes a cylindrical processing chamber storing a semiconductor wafer to be processed, a slot antenna, wound around the outside of a peripheral wall of the processing chamber, for feeding an electromagnetic wave of several tens MHz to the chamber, and an electromagnetic coil, provided on the outside of the processing chamber, for generating plasma in a plasma generating section due to electron cyclotron resonance by applying a magnetic field of 30 gausses or less to said processing chamber. The slot antenna has an elongated conductive plate having a length of about 1/2 of the wavelength of the electromagnetic wave, and an elongate slot formed in the conductive plate.
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