| 摘要 |
<p>PURPOSE: To easily form a bump by depositing predetermined substance to be deposited first on the bump forming position of the surface to be formed with a bump of the material of the bump at a first depositing rate in which the surface of the periphery of the bump forming position of the object to be formed with the bump is scarcely brought into close contact with the substance. CONSTITUTION: When lead is deposited on a protective film layer 7 of the periphery of an intermediate metal layer 3 formed on the pads 2 of a wafer 1A, the step of forming a lead deposited film 20 formed by depositing lead on the layer 7 is divided into two steps. At the first step, the lead is deposited thinner than the thickness of the lead deposited film 20 to be a final object at a first depositing rate in which the film 20 is scarcely brought into close contact with the layer 7, and at the second step, the lead is deposited on the film 20 at the second depositing rate faster than the first rate to form a second lead deposited film 21. Thus, a bump 8 can be formed without retaining a solder 9 on the layer 7 of the periphery of the layer 3 formed on the pads 2 of the wafer 1A.</p> |
