| 摘要 |
PURPOSE: To stably and highly efficiently produce fine wire-shaped silicon having a high grade by melting the silicon in a crucible penetrated with a fine hole in its bottom, bringing a seed crystal into contact with the silicon melt emerging from the fine hole to fuse the seed crystal thereto and pulling down the seed crystal. CONSTITUTION: The raw material silicon in the crucible 1 which is formed of the high melting material installed in a quartz tube 5 and is penetrated with the fine hole in its bottom is heated up and fused by a high-frequency coil 4, by which the silicon melt 2 is obtd. An inert gas 6 of an impurity content of <=1000ppm is introduced from the upper part into a fine wire-shaped silicon forming chamber and is discharged from the lower part. Further, the atmosphere in this forming chamber is so formed that the moisture content therein is <=10<-3> atm. pressure under a vapor pressure at 25 deg.C. The silicon melt 2 flows out downward through the fine hole formed perpendicularly at the center in the bottom of the crucible 1 and solidifies by coming into contact with the seed crystal 8. While observing the silicon solid-liquid boundary at the front end of the fine hole by a CCD camera 7 from outside, a pulling-down shaft 9 is pulled down to form the fine wire-shaped silicon 3. |
