| 摘要 |
PURPOSE: To obtain a gallium nitride-based semiconductor light-emitting element which improves a lattice matching property and which simplifies a manufacturing process by a method wherein one or more GaN-based semiconductor layers which include a light-emitting layer are formed directly on a substrate composed of hexagonal In2 O3 . CONSTITUTION: A GaN-based semiconductor layer is epitaxially grown on a substrate composed of hexagonal In2 O3 which has been epitaxially grown on a hexagonal sapphire substrate, the lattice matching property of a gallium nitride-based semiconductor light-emitting element is improved remarkably, and the light-emitting element is stabilized thermally and chemically. An n-type GaN-based semiconductor crystal layer 3A is laminated on an Sn-doped In2 O3 substrate 10. After that, in n-type A GaN layer 4, a Zn-doped InGaN layer 5, a p-type AlGaN layer 6 and a p-type GaN layer 7 are epitaxially grown sequentially on it. A positive ohmic electrode 8 is formed directly on the p-type GaN layer 7 in the uppermost layer, and a negative ohimic electrode 11 is formed on the rear of the In2 O3 substrate 10. When the light-emitting element is manufactured, the electrode 11 can be formed directly on the rear of the In2 O3 substrate 10, and its manufacturing process is simplified sharply. |
