发明名称 SILICON NITRIDE SINTERED BODY AND METHOD OF PRODUCING THE SAME
摘要 A dense silicon nitride sintered body having an excellent strength at high temperatures as well as at room temperature and a method of preparing it are disclosed. The body consists essentially of Si3N4 as a main component, the remainder being at least one rare earth element compound, SiC and at least one compound of tungsten or molybdenum. The grain boundary phase of Si3N4 grains consists substantially of crystal phases. The body is prepared by combining Si3N4 powder, a rare earth element oxide powder, and SiC powder, and a powder of at least one compound of W or Mo, forming the raw material into a shaped body, and firing the shaped body in N2 atmosphere to substantially crystallize the grain boundary phase of the Si3N4 grains.
申请公布号 CA2036010(C) 申请公布日期 1996.07.16
申请号 CA19912036010 申请日期 1991.02.08
申请人 NGK INSULATORS, LTD. 发明人 SAKAI, HIROAKI;ISOMURA, MANABU
分类号 C04B35/584;C04B35/593;(IPC1-7):C04B35/58;C04B35/50 主分类号 C04B35/584
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