| 摘要 |
PURPOSE: To obtain current and voltage characteristics including clear negative resistance characteristic by forming a drain area by alloying method for shallow and heavily doped junction in low temperature process. CONSTITUTION: After MBE growth, as deep as a surface of the second semiconductive layer 4 is removed by etching with a gate area left, and a gate electrode is formed on an insulation film 6 left. Sn and Zn are vapor-deposited on a source area and a drain area, respectively. Then a GaAs surface is alloyed at 430-450 degree, so that, on the source and drain areas, the first semiconductive layer 3 consisting of degenerated n<+> -GaAs and the third semiconductive layer 5 consisting of p<+> -GaAs are formed, respectively. Lastly, by vapor deposition, a source electrode 8 and drain electrode 9 are formed. Temperature required for alloying is relatively low, so that heavily doped drain area is formed in shallow, and since diffusion of impurities in a channel area is suppressed, abrupt junction is formed, so that, the current and voltage characteristics which have clear negative resistance characteristic is obtained. |
