| 摘要 |
PURPOSE: To obtain a semiconductor light-emitting diode whose light takeout efficiency and brightness are enhanced by a method wherein a current distribution from a surface electrode up to a light-emitting region is improved and the optical path of light advancing to the transverse direction is shortened. CONSTITUTION: In a light-emitting diode which is formed on a semiconductor substrate 1, a high-resistance layer 5 is formed on a light-emitting region layer, a low-resistance layer 6 is then formed on it in such a way that a part of the surface is exposed, an electrode 8 on the light-emitting surface side is formed over the surface of both resistance layers, and a semiconductor layer under the surface of a semiconductor layer which is sandwiched between adjacent sets of a plurality of parts 8b, for current supply, which are extended from a part 8a for bonding in the center of the electrode 8 is cut down to the substrate. |
