PREPARATION OF FINE MACHINERY STRUCTURES BY USING SINGLE SILICON CRYSTAL

摘要

The method produces a fine structure such as cantilever(6) or bridge(7) type structure by silicon on insulator. The method comprises the processed of epitaxially growing a buried oxide layer(2) on the SOI(silicon on insulator) board between a silicon board layer(3) and a surface silicon layer(1), forming an oxide layer(5) on the epitaxial surface silicon layer(4), selective by exposing the buried oxide layer(2) by a photo-engraving method, engraving the buried oxide layer(2), forming a fine structure by the epitaxial surface silicon layer. The buried oxide layer on the SOI board is formed by injection of oxygen ion. The engraving solution of the epitaxial surface silicon layer is potassium hydroxide. The engraving flux of the buried oxide layer is fluoric acid. The SOI board is SIMOX SOI board.