发明名称 |
Semiconductor memory device and method of forming the same |
摘要 |
A method of making an SDRAM (synchronous dynamic random access memory) into either a low-speed type or a high-speed type includes the steps of determining an electrical connection of a predetermined electrode of the SDRAM, and providing the predetermined electrode with a voltage level defined by the electrical connection, the voltage level determining whether the SDRAM is made into the low-speed type or the high speed type, wherein the low-speed type can carry out consecutive writing operations at a low clock rate for two addresses having the same row address, and the high-speed type can carry out simultaneous writing operations at a high clock rate for two addresses having the same row address and consecutive column addresses.
|
申请公布号 |
US5537354(A) |
申请公布日期 |
1996.07.16 |
申请号 |
US19940357307 |
申请日期 |
1994.12.14 |
申请人 |
FUJITSU LIMITED |
发明人 |
MOCHIZUKI, HIROHIKO;TAKEMAE, YOSHIHIRO;KODAMA, YUKINORI;YANAGISAWA, MAKOTO;TOMITA, HIROYOSHI |
分类号 |
G11C11/401;F02B75/02;G11C7/10;G11C11/407;G11C11/409;(IPC1-7):G11C13/00 |
主分类号 |
G11C11/401 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|