发明名称 Memory device
摘要 A memory device that does not need to be refreshed and that has a relatively small size. The memory device includes a memory cell having a first PNP transistor, wherein an input voltage is provided to its base and its emitter is ground and a second NPN transistor having its base connected to the collector of the first transistor and its emitter connected to a power source, and wherein the collector of the second transistor is connected to the base of the first transistor.
申请公布号 US5537348(A) 申请公布日期 1996.07.16
申请号 US19950396618 申请日期 1995.03.01
申请人 YOZAN INC. 发明人 SHOU, GUOLIANG;TAKATORI, SUNAO;YAMAMOTO, MAKOTO
分类号 G11C11/402;G11C11/411;(IPC1-7):G11C11/40 主分类号 G11C11/402
代理机构 代理人
主权项
地址