发明名称 |
Memory device |
摘要 |
A memory device that does not need to be refreshed and that has a relatively small size. The memory device includes a memory cell having a first PNP transistor, wherein an input voltage is provided to its base and its emitter is ground and a second NPN transistor having its base connected to the collector of the first transistor and its emitter connected to a power source, and wherein the collector of the second transistor is connected to the base of the first transistor.
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申请公布号 |
US5537348(A) |
申请公布日期 |
1996.07.16 |
申请号 |
US19950396618 |
申请日期 |
1995.03.01 |
申请人 |
YOZAN INC. |
发明人 |
SHOU, GUOLIANG;TAKATORI, SUNAO;YAMAMOTO, MAKOTO |
分类号 |
G11C11/402;G11C11/411;(IPC1-7):G11C11/40 |
主分类号 |
G11C11/402 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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